Temperature dependence of the GaAsN conduction band structure
13th Nov 2006, 22:42 GMT
A. Grau, T. Passow, and M. Hetterich In this contribution the authors investigate the temperature-dependent conduction band structure of GaAs[sub 1x]N[sub x] for different nitrogen contents. An analysis of their experimental photoreflectance data based on the two-band version of the band anticrossing model shows that with decreasing te ... [Appl. Phys. Lett. 89, 202105 (2006)] published Mon Nov 13, 2006.
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