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Pulsed laser annealing of Be-implanted GaN

2nd Nov 2005, 18:52 GMT

H. T. Wang, L. S. Tan, and E. F. Chor Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficie ... [J. Appl. Phys. 98, 094901 (2005)] published Wed Nov 2, 2005.

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