Energy band alignment of HfO[sub 2] on Ge
15th Nov 2006, 00:54 GMT
M. Perego, G. Seguini, and M. Fanciulli The band alignment of hafnium oxide films grown on Ge (100) by atomic layer deposition has been investigated by x-ray photoelectron spectroscopy (XPS) and internal photoemission (IPE) spectroscopy. HfO[sub 2] films have been grown using HfCl[sub 4] as hafnium precursor while O[sub 3] or H[sub 2]O ha ... [J. Appl. Phys. 100, 093718 (2006)] published Tue Nov 14, 2006.
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