Energy-band alignments at LaAlO[sub 3] and Ge interfaces
13th Nov 2006, 22:42 GMT
Y. Y. Mi, S. J. Wang, J. W. Chai, J. S. Pan, A. C. H. Huan et al. The energy-band alignments for LaAlO[sub 3] films on p-Ge(001) with and without GeO[sub x]N[sub y] interfacial layer have been studied using photoemission spectroscopy. The valence-band offsets at LaAlO[sub 3]/GeO[sub x]N[sub y]/Ge and LaAlO[sub 3]/Ge interfaces were measured to be 2.70 and 3.06 eV ... [Appl. Phys. Lett. 89, 202107 (2006)] published Mon Nov 13, 2006.
Energy-band alignments at LaAlO[sub 3] and Ge interfaces related news:
- Energy band alignment of HfO[sub 2] on Ge — Journal of Applied Physics: All Topics
- Temperature dependence of the GaAsN conduction band structure — Applied Physics Letters: All Topics
- Band gap bowing and electron localization of Ga[sub x]In[sub 1 - x]N — Journal of Applied Physics: All Topics
- Si[sub 1 - y]C[sub y] surface alloys used as self-patterned templates for the growth of Ge dots — Applied Physics Letters: All Topics
- GE Nuclear Merges With Hitachi for the "Global Nuclear Renaissance" — Treehugger
- The dynamical properties of the aromatic hydrogen bond in NH[sub 4](C[sub 6]H[sub 5])[sub 4]B from quasielastic neutron scattering — Journal of Chemical Physics: All Topics
- High-pressure synthesis of giant magnetostrictive Pr[sub x]Tb[sub 1 - x]Fe[sub 1.9] alloys — Applied Physics Letters: All Topics
- GE and Hitachi to form nuclear alliance — Energy Business Review Latest News
- Enhanced piezoresistive characteristics of Nb[sub 2]O[sub 5] modified La[sub 0.8]Sr[sub 0.2]MnO[sub 3] ceramics — Applied Physics Letters: All Topics
- Relation between the magnetic properties and the crystal and electronic structures of manganese spinels LiNi[sub 0.5]Mn[sub 1.5]O[sub 4] and LiCu[sub 0.5]Mn[sub 1.5]O[sub 4 - delta] (0 < delta < 0.125) — Journal of Applied Physics: All Topics
Latest news from Applied Physics Letters: All Topics:
- Tunable plasma wave resonant detection of optical beating in high electron mobility transistor
- Electrostatic and structural properties of GaN nanorods/nanowires from first principles
- Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers
- Enhanced piezoresistive characteristics of Nb[sub 2]O[sub 5] modified La[sub 0.8]Sr[sub 0.2]MnO[sub 3] ceramics
- p-type Zn[sub 1 - x]Mg[sub x]O films with Sb doping by radio-frequency magnetron sputtering
- Over 70% tunneling magnetoresistance at room temperature for a CoFe and AlO[sub x] based magnetic tunnel junction
- InGaAs quantum dot molecules around self-assembled GaAs nanomound templates
- Strong resonant luminescence from Ge quantum dots in photonic crystal microcavity at room temperature
- High-pressure synthesis of giant magnetostrictive Pr[sub x]Tb[sub 1 - x]Fe[sub 1.9] alloys
- Fluorescence in nanostructured fulleride films